4
RF Device Data
Freescale Semiconductor, Inc.
MRF7S21170HR3 MRF7S21170HSR3
Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic
Z11
0.060?
x 0.760?
Microstrip
Z12* 0.129?
x 0.083?
Microstrip
Z13* 0.436?
x 0.083?
Microstrip
Z14* 0.490?
x 0.083?
Microstrip
Z15* 0.275?
x 0.083?
Microstrip
Z16
0.230?
x 0.083?
Microstrip
Z17, Z18 0.900?
x 0.080?
Microstrip
PCB Taconic TLX8--0300, 0.030?,
?r
=2.55
* Variable for tuning
Z1 0.250?
x 0.083?
Microstrip
Z2* 0.090?
x 0.083?
Microstrip
Z3* 0.842?
x 0.083?
Microstrip
Z4* 0.379?
x 0.083?
Microstrip
Z5* 0.307?
x 0.083?
Microstrip
Z6 0.156?
x 0.787?
Microstrip
Z7 1.160?
x 0.080?
Microstrip
Z8 0.119?
x 0.787?
Microstrip
Z9 0.077?
x 0.880?
Microstrip
Z10 0.459?
x 1.000?
Microstrip
VBIAS
VSUPPLY
RF
Z16
OUTPUT
RF
INPUT
Z1
DUT
C1
C2
R1
Z2
Z3
Z4
C3
Z10
Z5
R2
Z7
R3
Z8
Z11
Z12
Z13
Z14
Z15
C5
C6
Z6
C18
C17
C16
C15
C14
C4
Z9
Z17
C8
C10
C12
C13
Z18
C7
C9
C11
+
Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 pF Chip Capacitor
ATC100B101JT500XT
ATC
C2, C3, C7, C8, C17, C18
6.8 pF Chip Capacitors
ATC100B6R8BT500XT
ATC
C4, C15
0.3 pF Chip Capacitors
ATC100B0R3BT500XT
ATC
C5
0.8 pF Chip Capacitor
ATC100B0R8BT500XT
ATC
C6
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C9, C10, C11, C12
10
?F Chip Capacitors
C5750X5R1H106MT
TDK
C13
470
?F, 63 V Electrolytic Capacitor, Radial
477KXM063M
Illinois Capacitor
C14
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C16
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
R1, R2
10 k?, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10
?, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
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相关代理商/技术参数
MRF7S21170HS 功能描述:IC MOSFET RF N-CHAN NI-880S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
MRF7S21170HSR3 功能描述:射频MOSFET电源晶体管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21170HSR5 功能描述:射频MOSFET电源晶体管 2.1GHZ HV7 WCDMA NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ 63W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HSR3 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF7S21210HSR5 功能描述:射频MOSFET电源晶体管 HV7 2.1GHZ WCDMA NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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